发明名称 |
Memory Module, Memory System, and Information Device |
摘要 |
A memory system including large-capacity ROM and RAM in which high-speed reading and writing are enabled is provided. A memory system including a non-volatile memory (CHIP1), DRAM (CHIP3), a control circuit (CHIP2) and an information processing device (CHIP4) is configured. Data in FLASH is transferred to SRAM or DRAM in advance to speed up. Data transfer between the non-volatile memory (FLASH) and DRAM (CHIP3) can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. As data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction, the performance and the function of a mobile device can be enhanced.
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申请公布号 |
US2010030952(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090579223 |
申请日期 |
2009.10.14 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MIURA SEIJI;AYUKAWA KAZUSHIGE |
分类号 |
G06F12/00;G06F12/02;G06F12/06;G11C7/20;G11C11/00;G11C11/4072 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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