SOLID STATE IMAGING DEVICE

摘要

Provided is a back irradiation type solid state imaging device which can produce a high definition image by preventing shading due to variation in the amount of saturated charges or blooming at the time of high brightness light irradiation. A vertical charge transfer region (2) is formed on the front surface side of a semiconductor substrate (23), and a photoelectric conversion region (1) is formed directly under the vertical charge transfer region (2) on the back surface side of the semiconductor substrate (23) becoming the light receiving surface. Furthermore, a p-type diffusion layer (31) and n-type diffusion layer (32) are formed closely to the vertical charge transfer region (2) on the back surface side of the semiconductor substrate (23). Decline of the amount of saturated charge in the photoelectric conversion region (1) can be limited and charges generated excessively can be discharged by controlling the potentials of the p-type diffusion layer (31) and n-type diffusion layer (32) via wiring (33, 34).