发明名称 |
Non-volatile memory devices including double diffused junction regions |
摘要 |
A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.
|
申请公布号 |
US7898039(B2) |
申请公布日期 |
2011.03.01 |
申请号 |
US20070675372 |
申请日期 |
2007.02.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH DONG-YEAN;SONG JAI-HYUK;LEE CHANG-SUB;LEE CHANG-HYUN;KIM HYUN-JAE |
分类号 |
H01L21/70;H01L29/76 |
主分类号 |
H01L21/70 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|