| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing nanowires, by which single crystal nanowires maintaining a crystal state of a crystal substrate and free of defects can be grown. SOLUTION: The formation of side facet necessary for free-standing nanowire is made unstable and the growth of a nanowire in a direction parallel to the surface of a crystal substrate and along the surface is made possible by growing the nanowire under growth conditions purposefully shifted from the relatively narrow range of growth conditions allowing the growth of the free-standing nanowire. Alternatively, it is possible to continuously arrange an n-type InP-nanowire 3n and a p-type InP nanowire 3p by switching, for example, the dopant on the way of growth of the nanowire, and further, a net-like semiconductor film can be obtained by crossing a plurality of parallel nanowires. COPYRIGHT: (C)2010,JPO&INPIT |
