| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a saw wire in which capability of the saw wire to carry a polishing material is drastically enhanced to improve efficiency of a cutting process, evenness of wafer thickness, and flatness of a wafer surface even when the diameter of the saw wire is reduced due to abrasion of the saw wire in cutting a hard material to manufacture a wafer. <P>SOLUTION: In the saw wire for cutting the hard material like a silicon block, the diameter of the saw wire ranges from 0.08 mmΦto 0.30 mmΦ. Longitudinal residual stress of the saw wire ranges from 400 MPa to 1,000 MPa in an area of depth of 5μm to 10μm apart from the surface of the saw wire. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
