| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device formed with a lateral type metal oxide semiconductor field effect transistor reduced in power loss. Ž<P>SOLUTION: In a pair of n-channel lateral MOSFETs 10 formed in the semiconductor device 1, drain contacts 32 for connecting drain electrodes 26 to drain regions 17 are disposed in two arrays. A trench 36 is formed between the drain regions 16 with the drain contacts 32 connected and an insulator 37 is embedded in the trench 36. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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