发明名称 Lateral Devices Containing Permanent Charge
摘要 A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.
申请公布号 US2010025726(A1) 申请公布日期 2010.02.04
申请号 US20090432917 申请日期 2009.04.30
申请人 MAXPOWER SEMICONDUCTOR INC. 发明人 PAUL AMIT;DARWISH MOHAMED N.
分类号 H01L29/78;H01L21/762 主分类号 H01L29/78
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