发明名称 |
Lateral Devices Containing Permanent Charge |
摘要 |
A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.
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申请公布号 |
US2010025726(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090432917 |
申请日期 |
2009.04.30 |
申请人 |
MAXPOWER SEMICONDUCTOR INC. |
发明人 |
PAUL AMIT;DARWISH MOHAMED N. |
分类号 |
H01L29/78;H01L21/762 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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