| 摘要 |
A resistance variable element (10), a resistance variable memory apparatus, and a resistance variable apparatus, comprise a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode (2) and the second electrode (4) and is electrically connected to the first electrode (2) and to the second electrode (4), wherein the resistance variable layer (3) contains a material having a spinel structure which is expressed as a chemical formula of (NixFe1-x) Fe2O4, X being not smaller than 0.35 and not larger than 0.9, wherein the resistance variable element has a characteristic in which an electric resistance between the first electrode (2) and the second electrode (4) decreases by application of a first voltage pulse having a first voltage between the first electrode (2) and the second electrode (4) and increases by application of a second voltage pulse having a second voltage which is different in polarity from the first voltage between the first electrode (2) and the second electrode (4).
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