| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a hybrid substrate circuit capable of combining a plurality of circuits requiring substrates different in 3-5 integrated circuits, silicon integrated circuits and the like with one another in one integrated circuit whereas the 3-5 integrated circuits and the silicon integrated circuits are formed on separate integrated circuits in the past. Ž<P>SOLUTION: This hybrid substrate circuit includes: a first region of a first semiconductor material; a second region including an embedded oxide layer and a second semiconductor material above the embedded oxide layer; a first circuit formed in the first semiconductor material; a second circuit formed in the second semiconductor material; and a shallow trench isolation region 103 between the first and second circuits. The first semiconductor material contains silicon, and the second semiconductor material does not contain silicon. The first circuit is a CMOS circuit 101, and the second circuit is a high-electron-mobility transistor circuit 102. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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