| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method, sufficiently suppressing the temperature rise of a flow straightening plate. SOLUTION: The flow straightening plate 104 is arranged upstream from a silicon wafer 101 in a direction in which reaction gas is allowed to flow. The flow straightening plate 104 includes a first through-hole 104a and a second through-hole 104b formed on a position which does not intersect with the first through-hole 104a. The reaction gas is allowed to flow to the silicon wafer 101 through the first through-hole 104a. Meantime, cooling gas passes through the second through-hole 104b. COPYRIGHT: (C)2010,JPO&INPIT
|
