High Performance Magnetic Tunnel Barriers with Amorphous Materials

摘要

A magnetic tunneling element is constructed from a MgO or Mg-ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel barrier. The amorphous magnetic layer includes Co and at least one additional element selected to make the layer amorphous. Magnetic tunnel junctions formed from the amorphous magnetic layer, the tunnel barrier, and an additional ferromagnetic layer have tunneling magnetoresistance values of up to 200% or more.