| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element of whose the element defect caused by a cleavage can be easily determined without increasing the number of manufacturing processes. Ž<P>SOLUTION: A nitride group semiconductor laser element 10 includes: nitride group semiconductor layers 12 to 19 formed on an n-type GaN substrate 11, a light emitting surface 30a composed of a cleavage surface and a p-side pad electrode 23 formed on the nitride group semiconductor layers 12 to 19. The nitride group semiconductor layers 12 to 19 include a ridge part 20 extended in a direction orthogonal to the light emitting surface 30a. In the p-side pad electrode 23, a notch portion 23a is formed on a predetermined portion including a portion located on the upper part of the ridge part 20 on the end part of the light emitting surface 30a. Thereby, a distance L2 from the light emitting surface 30a up to the p-side pad electrode 23 in an area other than the upper part of the ridge part 20 is smaller than a distance L3 from the light emitting surface 30a up to the p-side pad electrode 23 on the ridge part 20. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
