发明名称 MANUFACTURING METHOD OF PHOTOMASK FOR MULTIPLE EXPOSURE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING ABOVE PHOTOMASK
摘要 A position deviation and an image of a danger control pattern predicted after multiple exposure of each mask used for multiple exposure are acquired and an image after lap exposure by means of the masks based on the above image and position deviation information. At this time, parameters such as an offset amount caused by overlapping of images of the masks, rotation amount and the like are changed and a parameter capable of avoiding occurrence of faults in a dangerous pattern in an image predicted after lap exposure is calculated.
申请公布号 US2010028788(A1) 申请公布日期 2010.02.04
申请号 US20090491041 申请日期 2009.06.24
申请人 SAITO MASATO 发明人 SAITO MASATO
分类号 G03F1/36;G03F1/84;G03F7/00;G03F7/20;H01L21/027 主分类号 G03F1/36
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