Method of manufacturing semiconductor device having nonvolatile memory and logic circuit using multi-layered, inorganic mask

摘要

An inorganic film with a double-layers structure is used as an etching mask in an EEPROM area to pattern a double-layers gate, while a thin inorganic film obtained by removing one layer of the double-layers inorganic film by etching is used as an etching mask in a CMOS logic circuit area. Therefore, the gate pattern can be formed with high precision by using a thin etching mask in the CMOS logic circuit area.