发明名称 |
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF |
摘要 |
A semiconductor fabrication process according to the present invention defines an auxiliary structure with a plurality of spaces with a predetermined line-width in the oxide layer to prevent the conductive material in the spaces from being removed by etching or defined an auxiliary structure to rise the conductive structure so as to have the conductive structure being exposed by chemical mechanical polishing. Thus, the transmitting circuit can be defined without requiring an additional mask. Hence, the semiconductor fabrication process can reduce the number of required masks to lower the cost.
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申请公布号 |
US2010025762(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090403660 |
申请日期 |
2009.03.13 |
申请人 |
NIKO SEMICONDUCTOR CO., LTD. |
发明人 |
TU KAO-WAY;TUNG CHENG-HUI |
分类号 |
H01L29/78;H01L21/336;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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