| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a junction leak in a low-voltage transistor. Ž<P>SOLUTION: A semiconductor device with a high-voltage transistor and the low-voltage transistor includes an element isolation insulating film formed between a first element region 11 of the high-voltage transistor and a second element region 14 of the low-voltage transistor, a first gate insulating film 17 formed on a semiconductor substrate 1 in the first element region 11, a first gate electrode 12 formed on the first gate insulating film 17, a second gate insulating film 18 formed on the semiconductor substrate 1 in the second element region 14, and a second gate electrode 15 formed on the second gate insulating film 17. The element isolation insulating film includes a first element isolation region 13 adjacent to the surrounding area of the first element region 11 and a second element isolation region 16 adjacent to the surrounding area of the second element region 14 and having a bottom part lower that the bottom part of the first element isolation region 13. The first gate insulating film 17 is thicker than the second gate insulating film 18. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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