| 摘要 |
In one aspect of the present invention, a semiconductor device, may include a semiconductor substrate having a first surface and a second surface opposite to the first surface; a through hole in the semiconductor substrate, including an expansion portion which is provided in a vicinity of the first surface so that an opening area of the first opening is greater than an opening area of a lowermost portion of the expansion portion; a first insulating layer on the first surface of the semiconductor substrate; a first wiring layer on the first insulating layer to close the opening of the first insulating layer; a second insulating layer provided on the expansion portion of the through hole; and a second wiring layer on the second insulating layer to extend from inside of the through hole to the second surface of the semiconductor substrate.
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