| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor-phase growth apparatus which suppresses reaction in other than an aimed place and which uses a plurality of material gases, and to provide a vapor-phase growth method. Ž<P>SOLUTION: The vapor-phase growth apparatus forming a film on a substrate using a first material gas and a second material gas different from the first material gas, includes: a reaction chamber in which the substrate is disposed; a first material gas introduction path that communicates with the reaction chamber and introduces the first material gas; a second material gas introduction path that communicates with the reaction chamber and introduces the second material gas; and a separation gas introduction path that communicates with the reaction chamber between the first material gas introduction path and the second material gas introduction path and introduces a separation gas. The separation gas has a reaction rate with the first material gas and a reaction rate with the second material gas lower than that with the first material gas and the second material gas. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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