| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method of a semiconductor device are provided to maximize a sub-threshold property of a semiconductor device in a inverse mode. CONSTITUTION: A semiconductor device comprises a gate electrode(130a), a first drain spacer(150a), and a second drain spacer(170b). The gate electrode is formed on the semiconductor substrate. The first drain spacer is formed on one side of the gate electrode. The second drain spacer is formed on the first drain spacer. The semiconductor device also includes a first source spacer(150c), a second source spacer(170a), and an LDD domain frames(160a, 160b). The first source spacer is formed on the other side of the gate electrode.</p> |
