| 摘要 |
PURPOSE: A phase change memory device, a manufacturing and operation method thereof are provided to prevent a margin decrease according to the increase of the ratio of the set resistance/reset resistance by controlling the increase of the set resistance. CONSTITUTION: The interlayer dielectric layer(14) surrounding a switching element(12) is formed on a substrate(10). A laminate(ST1) is formed on the interlayer dielectric layer. The laminate comprises a underlying insulating layer(18), a gate electrode(20) and a top isolation layer(22). A phase-change layer(28) and an upper electrode(30) are successively laminated on the top isolation layer. The phase-change layer covers the upper side of a space insulating layer(24) and a lower electrode contact plug(25). The upper side of the upper electrode is touched with a bit line(BL).
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