| 摘要 |
<p>PURPOSE: A method for forming a gate of a nonvolatile memory device is provided to improve retention property by forming a capping layer with a silicon oxide film on the surface of an aluminum oxide film. CONSTITUTION: A tunneling insulating layer(21) and a charge trap layer(22) are laminated on a substrate(20). An SiO2 sealing film(23A) is formed on the charge trap layer. The silicon oxide film and an amorphous aluminum oxide film are laminated on the charge trap layer. The silicon within aluminum and a second silicon nitride film in amorphous aluminum oxide film is diffused. The amorphous aluminum oxide film is crystallized. A blocking insulation layer(26) is comprised of the crystallized aluminum oxide film(24A) and the second silicon oxide film.</p> |
