MEMORY DEVICE AND METHOD OF PROGRAMMING DATA IN MEMORY DEVICE

摘要

PURPOSE: A memory device and a memory data programming method are provided to store data without creating errors by varying the threshold voltage of a memory cell. CONSTITUTION: A memory cell array(110) comprises a plurality of multi-bit cells. An encoder(130) generates at least one first codeword with a first maximum value based on successive 1 values after encoding a first data page. An encoder generates at least one first codeword with a second maximum value based on successive 0 values after encoding a first data page. An encoder generates at least one second codeword after encoding a second data page. A programming part(120) programs at least one first codeword and a second codeword in a plurality of multi-bit cells.