Masks of semiconductor devices and methods of forming mask patterns

摘要

Masks for semiconductor devices and methods of forming masks of semiconductor devices are provided which are capable of improving line resolution. A disclosed mask includes: a first mask pattern disposed on a first side of the mask. The first mask pattern includes light-blocking patterns and light-blocking fine auxiliary patterns within a light-transmitting region. The mask also includes a second mask pattern disposed on a second side of the mask. The second mask pattern includes light-transmitting fine auxiliary patterns within a light-blocking region. The light-transmitting fine auxiliary patterns are disposed at positions corresponding to the light-blocking fine auxiliary patterns to facilitate an overlapping exposing process. The second mask has the opposite tone of the first mask, and the second mask is disposed at a position horizontally-translated from a position of the first mask. Accordingly, pattern bridge regions in repeated patterns of a poly-cell transistor device can be selectively removed.