| 发明名称 |
DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF |
| 摘要 |
<p>A method of forming a device is presented. The method includes providing a structure having first and second regions. A diffusion barrier is formed between at least a portion of the first and second regions. The diffusion barrier comprises cavities that reduce diffusion of elements between the first and second regions.</p> |
| 申请公布号 |
SG158036(A1) |
申请公布日期 |
2010.01.29 |
| 申请号 |
SG20090040163 |
申请日期 |
2009.06.12 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
SENG TAN SHYUE;WEE TEO LEE;FU CHONG YUNG;QUEK ELGIN;CHU SANFORD |
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