发明名称 |
Method for calculating high-resolution wafer parameter profiles |
摘要 |
An embodiment of the present invention provides a method to utilize data from many different die sizes and products so that highly detailed wafer profiles can be generated that have an improved signal to noise ratio and spatial resolution. Instead of being limited to single die size like normal wafer maps, this method takes advantage of multiple die sizes and their variation in placement on the wafer to increase the information available about the wafer patterns.
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申请公布号 |
US7653523(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20030736386 |
申请日期 |
2003.12.15 |
申请人 |
LSI CORPORATION |
发明人 |
WHITEFIELD BRUCE;ABERCROMBIE DAVID |
分类号 |
G06F17/10;G06F17/50;H01L21/66 |
主分类号 |
G06F17/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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