发明名称 |
Magneto-resistive or tunneling magneto-resistive element having a shielding film of an amorphous layer above a crystalline layer, and method for manufacturing the same |
摘要 |
A tunneling magneto-resistive element includes: a tunneling magneto-resistive film including an antiferromagnetic layer, a pinned layer, a barrier layer and a free layer; and a lower magnetic shielding film disposed below the tunneling magneto-resistive film with respect to a lamination direction. The barrier layer is constituted of magnesium oxide. The lower magnetic shielding film has a multi-layer structure including a crystalline layer and an amorphous layer disposed above the crystalline layer with respect to the lamination direction. The crystalline layer contains at least one crystal grain having a grain size of 500 nm or more.
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申请公布号 |
US7652854(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20060500311 |
申请日期 |
2006.08.08 |
申请人 |
TDK CORPORATION |
发明人 |
KAGAMI TAKEO;OHTA NAOKI;SATO KAZUKI;MIURA SATOSHI |
分类号 |
G11B5/33 |
主分类号 |
G11B5/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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