发明名称 |
Semiconductor laser device and solid-state laser device using the same |
摘要 |
A semiconductor laser device with the energy density increased at the focal point and a LD pumped solid-state laser device configured of the particular semiconductor laser device are provided. A stack array laser element for radiating a two-dimensional array of laser beams includes a plurality of parallel laser beam columns each aligned in the form of dotted lines. In front of the stack array laser element, each laser beam column collimated by being refracted in the direction substantially perpendicular to the direction of the dotted line is received, and radiated by turning at right angles to the direction of the laser beams from each emitter or emitter group. In this way, the laser beams are converted into a plurality of substantially ladder-shaped parallel laser beam columns. These parallel laser beam columns are compressed to form parallel laser beam columns in alignment. Each compressed one of parallel laser beam columns is turned at right angles and radiated. Thus, all the laser beams are converted into a plurality of aligned parallel laser beams, which are collimated and condensed at a focal point.
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申请公布号 |
US7653115(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20030473961 |
申请日期 |
2003.09.30 |
申请人 |
NIPPON STEEL CORPORATION;NIPPON BUNRI UNIVERSITY SCHOOL OF ENGINEERING |
发明人 |
YAMAGUCHI SATOSHI;HAMADA NAOYA |
分类号 |
H01S3/08;G02B27/09;H01S5/00;H01S5/40 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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