发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device includes an active region formed on a semiconductor substrate, an element isolation region formed on the semiconductor substrate so as to surround the active region, and a gate electrode formed on the active region. A region that causes tensile stress so as to improve carrier mobility in the active region is provided in the element isolation region.
申请公布号 US7652346(B2) 申请公布日期 2010.01.26
申请号 US20070939027 申请日期 2007.11.13
申请人 PANASONIC CORPORATION 发明人 SUZUKI KEN;TSUTSUI MASAFUMI
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
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