| 摘要 |
Fabrication of inductance (10) in monolithic circuit made of silicon substrate (11) with plane upper surface comprises: <??>(a) forming a cavity in substrate following the contour of the inductance to be formed, section of the cavity being deeper than its width; <??>(b) forming porous silicon (27) region at the level of the cavity and oxidizing this region of porous silicon; <??>(c) filling cavity with conducting material. <??>An Independent claim is also included for an inductance formed in a monolithic circuit by this method of fabrication. |
