| 摘要 |
PURPOSE: A high power semiconductor chip package and method for fabricating the same are provided to dissipate the heat of the high power semiconductor chip. CONSTITUTION: The high power semiconductor chip package(300) comprises the heat conductor(310), and the substrate for packaging(320) and the insulator(330). The semiconductor chip is attached to the heat conductor. The heat conductor is attached to the predetermined part of the substrate for packaging. The thermal conductor is composed of copper. The input-output terminal(332) is molded in insulator. The input-output terminal is combined with the semiconductor chip and wire bonding. The insulator is attached to the partial domain except for the prescribed part of the substrate for packaging. |
