| 摘要 |
<p>PURPOSE: A flash memory device and manufacturing method thereof are provided to reduce the current length of the common source line. CONSTITUTION: A plurality of STI(Shallow Trench Isolation)s is formed for the definition of the active area(110) and field area in the semiconductor substrate(100) at the bit line direction. A plurality of gate stacks is formed in the above semiconductor top of the substrate at the word line direction. The common source line(190) is formed between the gate stack. The common source line comprises the trench(135), and the silicon pattern(180) and impurity regions(191,192). The insulating material of the STI between the gate stacks is removed. The trench is formed. The impurity region is formed in the surface of the active area and surface of the silicon pattern.</p> |
