| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase the width of a contact hole expected area by etching a first spacer with a preset thickness after removing an insulation layer for a second spacer of the memory cell transistor expected area. CONSTITUTION: A gate pattern(210) is formed on a substrate(200). A first spacer(230) is formed. An insulation layer for a second spacer is formed. A first mask is formed on a memory cell transistor-expected area. A second spacer(240A) is formed on a sidewall of the gate pattern by etching the insulation layer for the second spacer. After forming a second mask(270), the insulation layer for the second spacer is removed. The first spacer is etched with the partial thickness. The width(W2) of a contact hole expected area is increased.
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