发明名称 |
TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RELATED MANUFACTURING METHOD |
摘要 |
Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.
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申请公布号 |
US2010012975(A1) |
申请公布日期 |
2010.01.21 |
申请号 |
US20080176835 |
申请日期 |
2008.07.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PAL ROHIT;YANG FRANK BIN;HARGROVE MICHAEL J. |
分类号 |
H01L29/778;H01L21/336 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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