| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric memory device in which the amount of leakage current flowing through memory cells is small. Ž<P>SOLUTION: The ferroelectric memory device includes the memory cells, plate lines connected to ends of the memory cells, and a plate line control circuit for supplying a first or second voltage to the plate lines or bringing the plate lines into high impedance. The plate line control circuit preferably supplies a first or second voltage to a predetermined plate line of the plurality of plate lines, and brings the other plate lines into high impedance. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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