| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a porous structure that prevents a semiconductor substrate and a protecting film from being peeled off by a chemical solution used for anodization. SOLUTION: The method of manufacturing the porous structure includes the steps of: forming an oxide film 14 on a semiconductor substrate 10 on which a diffusion layer 12 is formed; providing a plurality of connecting holes at predetermined positions on the oxide film 14, forming wirings 22 in the connecting holes, and then providing such an opening 24 as to expose a surface of the diffusion layer 12 in an area held between the wirings 22; forming a groove 26 at an outer edge of the opening 24 and depositing a protecting layer 28 on an overall surface, whereon the diffusion layer 12 is formed, of the semiconductor surface 10 so as to bury the groove 26; removing the protecting film 28 of the opening 24 so as to leave the protecting layer 28 at the outer edge of the opening 24, and exposing the diffusion layer 12; and performing anodization on the exposed diffusion layer 12 with the protecting layer 28 left in the opening 24 as a protecting film 32. COPYRIGHT: (C)2010,JPO&INPIT |
