| 摘要 |
PROBLEM TO BE SOLVED: To improve a stress relaxing function by a stress relaxation member while suppressing a decrease in thermal conductivity of the stress relaxation member. SOLUTION: A semiconductor device 10 includes an insulation circuit board 11 which has a first metal plate 14 bonded to an upper surface 13a of a ceramic substrate 13 and a second metal plate 15 bonded to a lower surface 13b of the ceramic substrate 13. A semiconductor element 12 is bonded to the first metal plate 14, and the second metal plate 15 is bonded to a heat sink 16 through the stress relaxation member 20. The heat sink 16 has a plurality of partitioning walls 18 that extend in one direction and are arranged at intervals. The stress relaxation member 20 has a plurality of through-holes 21 which extend penetrating the stress relaxation member along the thickness and form a stress absorbing portion. Each through-hole 21 is formed such that its dimension along the longitudinal direction of the partitioning walls 18 is greater than its dimension along the arranging direction of the partitioning walls 18. COPYRIGHT: (C)2010,JPO&INPIT |
