| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer having a large diameter of which the warp quantity is small. SOLUTION: A silicon wafer 1 with a diameter of 300 mm or more is grown by the Czochralski method, and is manufactured by slicing a silicon single crystal ingot doped with boron and germanium. The silicon wafer 1 grows a silicon epitaxial layer 2 on a surface of the silicon wafer 1, wherein the boron is doped to be at a concentration of 8.5×10<SP>18</SP>(atoms/cm<SP>3</SP>) or higher and the germanium is doped to satisfy a relational expression (formula 1). COPYRIGHT: (C)2010,JPO&INPIT |
