| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element capable of preventing the leakage current of the element from being generated by suppressing the damage of a semiconductor substrate to the maximum limit. Ž<P>SOLUTION: The method for manufacturing the semiconductor element includes the steps of sequentially forming a first contact hole, a non-crystal polysilicon film and a PMD film 26, ion implanting, and then forming metal wirings. Thus, since coding is conducted by using the first contact hole, other coding region is not separately necessary, and hence the area of a chip can be reduced. Since the first contact hole is formed before a PMD is vapor-deposited, the damage of the semiconductor substrate 20 is reduced to decrease the leakage current. Thus, ON characteristics are provided by implanting ions in an opposite type otherwise OFF characteristics are provided, contrary to the normal ROM coding, and a polysilicon film is formed on the lower part of the metal wiring layer at the time of vapor-depositing the metal wiring, and hence the interruption of the metal wiring can be minimized. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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