| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an NAND type flash memory for improving the crystallinity of a memory cell. <P>SOLUTION: An NAND type flash memory cell includes a plurality of memory cells formed on a silicon substrate, and serially connected between two selection gate transistors. This NAND type flash memory cell includes: a silicon substrate in which a direction vertical to an upper face is a first crystal face azimuth <001> direction; an embedded insulating film formed on the silicon substrate and having a first groove extended along a second crystal face azimuth <100> or <010> direction, and put through the upper face of the silicon substrate for exposure; a crystalline silicon film formed on the first groove and the embedded insulating film by solid-phase epitaxial growth, and having the same face azimuth as that of the silicon substrate; and a charge accumulation layer formed on a tunnel insulating film formed on the silicon film to configure the memory cell. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
