| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress reduction in the degree of vacuum and a change in internal pressure in an airtight space. Ž<P>SOLUTION: A hole section 7 is formed at a surface side, facing the airtight space 12 on a glass substrate 2. By increasing the volume of the airtight space 12 by forming such a hole section 7, influence on the degree of vacuum or the change in the internal pressure in the airtight space 12 by gas can be reduced, in comparison with a case without any hole sections 7, even if gas is generated in the airtight space 12; thus reduction in the degree of vacuum or the change in internal pressure in the airtight space 12 is suppressed, when anodic bonding of an Si substrate 1 to the glass substrate 2 is carried out. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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