发明名称 |
Deposition Donor Substrate and Method for Manufacturing Light-Emitting Device |
摘要 |
One surface of a first substrate provided with at least light-absorbing layers separately formed, partition layers each formed between the light-absorbing layers and having an inverse taper shape, and material layers formed on the light-absorbing layers and on the partition layers so that the material layers are separated from each other is disposed to face a deposition target surface of a second substrate; light irradiation is performed from the other surface of the first substrate, only the material layers in regions overlapped with the light-absorbing layers are heated and evaporated to the deposition target surface of the second substrate. |
申请公布号 |
US2010015424(A1) |
申请公布日期 |
2010.01.21 |
申请号 |
US20090503220 |
申请日期 |
2009.07.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SEO SATOSHI;YOKOYAMA KOHEI |
分类号 |
B32B7/02;B29C71/02 |
主分类号 |
B32B7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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