发明名称 Deposition Donor Substrate and Method for Manufacturing Light-Emitting Device
摘要 One surface of a first substrate provided with at least light-absorbing layers separately formed, partition layers each formed between the light-absorbing layers and having an inverse taper shape, and material layers formed on the light-absorbing layers and on the partition layers so that the material layers are separated from each other is disposed to face a deposition target surface of a second substrate; light irradiation is performed from the other surface of the first substrate, only the material layers in regions overlapped with the light-absorbing layers are heated and evaporated to the deposition target surface of the second substrate.
申请公布号 US2010015424(A1) 申请公布日期 2010.01.21
申请号 US20090503220 申请日期 2009.07.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SEO SATOSHI;YOKOYAMA KOHEI
分类号 B32B7/02;B29C71/02 主分类号 B32B7/02
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