发明名称 AQUEOUS DISPERSING ELEMENT FOR CHEMICAL MECHANICAL POLISHING, MANUFACTURING METHOD THEREOF, AND CHEMICAL MECHANICAL POLISHING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing having high polishing speed and high polishing selectivity to a copper film without causing any defects to the copper film and a low-dielectric-constant insulation film even under normal pressure conditions, and having a small amount of metal contamination in a wafer, and to provide a chemical mechanical polishing method using the aqueous dispersing element for chemical mechanical polishing. <P>SOLUTION: The aqueous dispersing element for chemical mechanical polishing polishes the copper film. The copper film contains: a silica particle A; an organic acid B; and a water-soluble polymer C having properties as a Lewis base of which weight-average molecular weight is not less than ten thousand and not more than a million and a half. The silica particle A has the following chemical properties of a silanol group calculated from signal area of a<SP>29</SP>Si-NMR spectrum being 2.0-3.0×10<SP>21</SP>/g. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010016346(A) 申请公布日期 2010.01.21
申请号 JP20090029635 申请日期 2009.02.12
申请人 JSR CORP 发明人 IKEDA MASATOSHI;SHIDA HIROTAKA;UCHIKURA KAZUICHI;ANDO MICHIAKI
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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