| 摘要 |
PROBLEM TO BE SOLVED: To increase a write current while suppressing an increase in cell area. SOLUTION: A resistance change memory includes a first device region 10, first and second bit lines BL1 and BL2 provided above the first device region and extending along a first direction X, first and second resistance change elements MTJ1 and MTJ2 that are connected to the first and second bit lines, respectively, and a first transistor Tr1. The first transistor Tr1 is serially connected to both first and second resistance change elements, formed in the first device region, and has a first gate electrode G1 extending along a second direction Y which intersects with the first direction. The first gate electrode has a gate width equal to a width in the second direction of the first device region. COPYRIGHT: (C)2010,JPO&INPIT |
