| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device aiming at miniaturization while suppressing deterioration of high frequency characteristics. <P>SOLUTION: A semiconductor chip 5 mounted on the main surface of a wiring board 1 includes a chip side input electrode 6A electrically connected to the input part of a first amplifying means PW1, and a chip side output electrode 6B electrically connected to the output part of a second amplifying means PW2, the wiring board 1 has a board side input electrode 2A and a board side output electrode 2B on the main surface, the output part of the first amplifying means PW1 is electrically connected to the input part of the second amplifying means PW2, the chip side input electrode 6A is electrically connected to the board side input electrode 2A by an input wire 7A, the chip side input electrode 6B is electrically connected to the board side output electrode 2B by an output wire 7B, the input wire 7A is formed so as to straddle one side of a pair of the first sides forming the flat shape of the semiconductor chip 5, and the output wire 7B is formed so as to straddle one side of a pair of second sides. <P>COPYRIGHT: (C)2010,JPO&INPIT |
