| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer which can alleviate distortions on the back surface of the epitaxial wafer. SOLUTION: The method for manufacturing the epitaxial wafer using a susceptor 2 for a vapor phase growth system having a concave shaped wafer placement portion 21 on the upper face thereof, on which a semiconductor wafer W is placed, includes: an oxide film forming step in which an oxide film Ox is formed on the back surface W2 of the semiconductor wafer W; a wafer placing step in which, after the oxide film forming step, the semiconductor wafer W is placed on a wafer placement portion 21 so that the back surface W2 of the semiconductor wafer W faces downward; and an epitaxial growth step in which, after the wafer placing step, an epitaxial layer is grown on the main surface W1 of the semiconductor wafer W. COPYRIGHT: (C)2010,JPO&INPIT |
