BACK SURFACE TECHNOLOGY IMAGER PIXEL AND RELATED IMAGE SENSOR

摘要

The invention relates to an imager pixel used in back surface technology that includes an absorption layer made of crystalline silicon (4) having a single type of doping, and in which is formed at least one carrier collection electrode (7) to which a first potential (V1) is applied, characterised in that the imager pixel further includes: an absorption layer made of amorphous silicon (5) attached to a surface of the absorption layer made of crystalline silicon (4), and in which a diode (5a, 5b) is formed; and a transparent electrode (6) attached to the absorption layer made of amorphous silicon (5), and to which a second potential (V2) is applied, the potential difference between the first potential and the second potential leading to a reverse bias of the diode. The invention can be used in the field of imaging.