| 摘要 |
PROBLEM TO BE SOLVED: To solve the following problems: the conventional dicing device which divides semiconductor chips at an element formation portion cannot be used since a thick peripheral portion is left in a final process in a process of manufacturing a semiconductor wafer in which only the element formation portion is made thin and the peripheral portion still has the initial thickness of a semiconductor substrate, and a new facility investment is necessary. SOLUTION: The semiconductor substrate which has the initial thickness (first thickness) has only the element formation portion made thin to a second thickness and after a metal layer is formed on its backside, the initial peripheral part which still has the initial thickness (first thickness) of the semiconductor device is ground from the backside to a third thickness to form a peripheral portion which has a small step with the element formation portion. Consequently, the element formation portion and peripheral part are cut apart from each other by the conventional dicing device without introducing a new dicing device for cutting off the thick peripheral portion. COPYRIGHT: (C)2010,JPO&INPIT
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