发明名称 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT
摘要 A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
申请公布号 EP1706898(A4) 申请公布日期 2010.01.20
申请号 EP20040818010 申请日期 2004.12.10
申请人 LAM RESEARCH CORPORATION 发明人 FISCHER, ANDREAS;LOEWENHARDT, PETER
分类号 H01L21/306;B24B5/00;B24B29/00;B24B37/04;B24B41/06;C23F1/02;H01J37/32;H01L21/00;H01L21/687 主分类号 H01L21/306
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