发明名称 |
SOLID STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND IMAGING DEVICE |
摘要 |
Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12. |
申请公布号 |
EP2146376(A1) |
申请公布日期 |
2010.01.20 |
申请号 |
EP20070792729 |
申请日期 |
2007.08.20 |
申请人 |
SONY CORPORATION |
发明人 |
YAMAGUCHI, TETSUJI;OHGISHI, YUKO;ANDO, TAKASHI;IKEDA, HARUMI |
分类号 |
H01L27/146;H01L27/148;H01L31/00;H01L31/10;H04N5/335;H04N5/361;H04N5/369 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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