Semiconductor memory device having dummy sense amplifiers and methods of utilizing the same

摘要

A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.